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| MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features http://onsemi.com R1 PIN 1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) * Simplifies Circuit Design * Reduces Board Space and Component Count * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM A8x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 508 (Note 1) 311 (Note 2) 174 (Note 1) 208 (Note 2) -55 to +150 Unit mW C/W C/W C/W C A8x = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet. RqJA RqJL TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ minimum pad 2. FR-4 @ 1.0 x 1.0 inch pad (c) Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 11 Publication Order Number: MMUN2211LT1/D MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G ICBO ICEO IEBO - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2232LT1G MMUN2238LT1G MMUN2230LT1G MMUN2231LT1G MMUN2241LT1G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 - - - - - - - - - - - - - 60 100 140 140 350 350 5.0 15 30 200 150 350 350 - - - - - - - - - - - - - - - - - - - - - - - - - - Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 1 mA) (IC = 10 mA, IB = 5 mA) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MMUN2211LT1G MMUN2212LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2213LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2230LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2231LT1G MMUN2232LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G VOL Vdc - - - - - - - - - - - - - 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.1 0.47 - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc - - - - - - - - - - - - - 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 - - kW (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor R1 Resistor Ratio R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2211LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (MILLIWATTS) 250 200 1 IC/IB = 10 TA = -25C 25C 75C 0.1 150 100 50 0 -50 RqJA= 625C/W 0.01 0 50 100 150 0.001 0 20 40 60 80 TA, AMBIENT TEMPERATURE (5C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V Cob, CAPACITANCE (pF) TA = 75C 25C -25C 100 3 4 Figure 2. VCE(sat) vs. IC f = 1 MHz lE = 0 A TA = 25C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 75C 10 25C Vin, INPUT VOLTAGE (V) TA = -25C 10 Figure 4. Output Capcitance VO = 0.2 V TA = -25C 25C 75C 1 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 0.001 0.1 0 Vin, INPUT VOLTAGE (VOLTS) 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2212LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = -25C 25C 1000 VCE = 10 V TA = 75C 0.1 75C 100 25C -25C 0.01 - 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) vs. IC 4 Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 A TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 Figure 8. DC Current Gain 75C 25C TA = -25C 3 2 0.1 1 0.01 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS) 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 10. Output Current vs. Input Voltage TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2213LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 10 1000 IC/IB = 10 TA = -25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 100 0.1 0.01 0 20 40 60 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC 1 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 100 Figure 13. DC Current Gain 75C 10 1 0.1 25C TA = -25C Cob, CAPACITANCE (pF) 0.6 0.4 0.2 0 0 0.01 VO = 5 V 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 15. Output Current vs. Input Voltage TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2214LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = -25C 25C 75C 300 VCE = 10 250 25C 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) -25C TA = 75C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 100 Figure 18. DC Current Gain 75C 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 Figure 19. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 20. Output Current vs. Input Voltage TA = -25C 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2215LT1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C -25C 0.01 1000 75C TA = -25C 25C VCE = 10 V 0.1 25C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 1 0.1 0.01 TA = -25C 25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 8 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2216LT1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 75C TA = -25C VCE = 10 V 0.1 -25C 0.01 75C 100 25C 25C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 10 1 0.1 0.01 75C 25C TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = -25C 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 9 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2230LT1G 100 IC/IB = 10 75C -25C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 0.1 25C 10 75C 25C TA = -25C VCE = 10 V 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75C 25C TA = -25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 10 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2231LT1G 100 IC/IB = 10 75C -25C 0.01 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 0.1 25C 10 75C 25C TA = -25C VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 75C 10 1 0.1 0.01 TA = -25C 25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 11 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2232LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB =10 1000 hFE, DC CURRENT GAIN VCE = 10 V TA = 75C 0.1 TA = 75C 25C 100 -25C 25C -25C 0.01 10 0.001 4 8 12 16 20 24 28 1 0 25 50 75 100 125 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) vs. IC 6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 f = 1 MHz IE = 0 A TA = 25C 100 75C 10 Figure 43. DC Current Gain VO = 5 V 25C Cob, CAPACITANCE (pF) 1 TA = -25C 0.1 0 10 20 30 40 50 60 0.01 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 44. Output Capacitance 10 VO = 0.2 V TA = -25C 75C 1 25C Figure 45. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) 0.1 0 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 46. Output Voltage vs. Input Current http://onsemi.com 12 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2233LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN 75C 25C TA = -25C 1000 0.1 75C 25C 100 0.01 TA = -25C 10 VCE = 10 V 2 7 12 17 22 27 32 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 f = 1 MHz IE = 0 A TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C Figure 48. DC Current Gain TA = -25C 10 1 0.1 25C 0 2 4 6 VO = 5 V 8 0.01 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 49. Output Capacitance 10 VO = 0.2 V Figure 50. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) TA = -25C 25C 1 75C 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) 30 Figure 51. Input Voltage vs. Output Current http://onsemi.com 13 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MMUN2234LT1G 1000 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 VCE = 10 V 0.1 75C -25C 25C 0.01 25C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain TBD IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 14 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2238LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN 1000 75C TA = -25C 0.1 75C TA = -25C 25C 100 25C 0.01 10 VCE = 10 V 0 20 40 60 80 100 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) vs. IC 4 IC, COLLECTOR CURRENT (mA) 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 f = 1 Mhz TA = 25C 100 75C Figure 58. DC Current Gain 10 25C 1 TA = -25C 0.1 VO = 5 V 0 1 2 3 4 5 0.01 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 59. Output Capacitance 10 VO = 0.2 V Figure 60. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) 1 25C TA = -25C 75C 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage vs. Output Current http://onsemi.com 15 MMUN2211LT1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 62. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 63. Open Collector Inverter: Inverts the Input Signal Figure 64. Inexpensive, Unregulated Current Source http://onsemi.com 16 MMUN2211LT1G Series ORDERING INFORMATION Device MMUN2211LT1G MMUN2211LT3G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2234LT3G A8L A8A Marking R1(k) 10 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 22 R2(k) 10 10 22 47 47 1.0 2.2 4.7 47 47 47 Package SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) SOT-23 (Pb-Free) 10,000 / Tape & Reel Shipping 3000 / Tape & Reel 10,000 / Tape & Reel A8B A8C A8D A8E A8F A8G A8H A8J A8K 3000 / Tape & Reel MMUN2238LT1G MMUN2241LT1G A8R A8U 2.2 100 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 17 MMUN2211LT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 18 MMUN2211LT1/D |
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